Topology Driven g -Factor Tuning in Type-II Quantum Dots
نویسندگان
چکیده
منابع مشابه
Field tuning the g factor in InAs nanowire double quantum dots.
We study the effects of magnetic and electric fields on the g factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g factors are extracted from the spin resonance condition as a function ...
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Semiconductor heterostructures can be classified according to the band alignment between two adjacent materials. Two major classifications are: type-I systems, where the narrower gap material presents a potential well for both electrons and holes, and type-II, where the band alignment has a staggered character, i.e. the material with the lower potential energy for electrons have the higher ener...
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Igor L. Kuskovsky,1,* W. MacDonald,1 A. O. Govorov,2 L. Mourokh,1 X. Wei,3 M. C. Tamargo,4 M. Tadic,5,6 and F. M. Peeters5 1Department of Physics, Queens College of CUNY, Flushing, New York 11367, USA 2Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701, USA 3NHMFL, Tallahassee, Florida, 32310, USA 4Department of Chemistry, The City College of CUNY, New York, New York 10031...
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Recombination dynamics in CdTe/CdSe core-shell type-II quantum dots (QDs) has been investigated by time-resolved photoluminescence (PL) spectroscopy. A very long PL decay time of several hundred nanoseconds has been found at low temperature, which can be rationalized by the spatially separated electrons and holes occurring in a type-II heterostructure. For the temperature dependence of the radi...
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One process limiting the performance of solar cells is rapid cooling (thermalization) of hot carriers generated by higher-energy solar photons. In principle, the thermalization losses can be reduced by converting the kinetic energy of energetic carriers into additional electron-hole pairs via carrier multiplication (CM). While being inefficient in bulk semiconductors this process is enhanced in...
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ژورنال
عنوان ژورنال: Physical Review Applied
سال: 2019
ISSN: 2331-7019
DOI: 10.1103/physrevapplied.11.044011